The Institute for Materials Research and the Solid State Electronics and Photonics (SSEP) Seminar Series jointly present
Oxide-based UV Photodetection
Adrian Hierro, Associate Director, Department of Electrical Engineering, Universidad Politecnica de Madrid
Thursday, February 3, 2011
1:30 PM, 260 Dreese Laboratories
This talk is part of a newly formed international partnership between the OSU Institute for Materials Research and the Universidad Politecnica de Madrid (UPM) created to enhance educational, academic and research in areas central to advanced materials and related technologies at both institutions.
Abstract
Among the most promising approaches to achieve UV light detection with high quantum efficiencies ZnMgO alloys clearly hold a highly relevant position, especially for near and middle ultraviolet (UVB and UVC bands). These alloys have a series of outstanding properties over competing technologies in the UV, which include high stability of the free exciton (binding energy of 60 meV in bulk ZnO compared to 25 meV in GaN), and the possibility to achieve highly controllable and easily scalable columnar growth over large areas. Moreover, structures with the polar axis in plane and out of plane can easily be grown, thus providing a great control for the design of photodetectors where the absorption edge can be tuned to sense the polarization of UV light. In this presentation we will cover some recent advances on UV photodetection with polar and non-polar oxide based structures, the current limitations and the future prospects for this technology.
Speaker Bio
Adrian Hierro received the B.S. in physics from Universidad Autonoma de Madrid (Spain), and the M.S. and Ph.D. in electrical engineering from The Ohio State University. In 2002 he moved to the Technical University of Madrid, Optoelectronic Systems and Microtechnology Institute, with a Ramon y Cajal Research Fellowship, and in 2010 he became an Associate Professor at the Dept. of Electrical Engineering. During his time in Madrid his research interests have covered IR GaInNAs/GaAs QW LEDs and LDs. Recently, he started working on InAs/GaAsSbN QDs for 1.3 and 1.5 mm LED/LDs, and on ZnO/ZnMgCdO oxides for UV photodetection, including defect analysis and development of Schottky/MSM photodetectors.