IMR Announces New International Collaboration with Universidad Politecnica de Madrid

ORISadmin General

The Ohio State University Institute for Materials Research (IMR) recently formalized its international collaboration with Universidad Politecnica de Madrid (UPM), a top technological/engineering university in Spain, through the signature of a Memorandum of Understanding between OSU/IMR and the UPM President’s office (Rectorate).  The purpose of the MOU is to enhance education and research in areas central to advanced materials and related technologies at both institutions, leading to vibrant collaborations through:

  1. Exchange of faculty members and researchers,
  2. Exchange of students,
  3. Exchange of information and academic resources that are of mutual interest,
  4. Activities such as collaborative research, joint symposia and exchange lectures.

In order to start this institutional collaboration, UPM and IMR discussed and agreed upon a set of research topics of initial common interest, based on assessing similar interests and assets at both institutions.  The list can be expanded and revised over time, but it was determined that the following focused set of topics would be the best way to proceed based on mutual faculty interests and strengths: 

–       Development of optoelectronic devices:

  • Use of III-V/Si and III-V/III-V metamorphic structures
  • InAs/InGaAsSb/GaAs quantum dots, and InGaAs/GaAsSb/GaAs and GaAs/AlAs quantum wells
  • Infrared and visible quantum well and quantum dot light emitting devices and photodetectors

 –       Advancement on semiconducting oxides:

  • ZnO, MgZnO, CdZnO alloys
  • Bulk material, thin epilayers and nanowires
  • Optimization of electrical properties and analysis of electrically active defects
  • UV photodetectors, light emitting diodes and gas sensors

 –       Multispectral photodetectors  in the VIS-IR based on III-V heterostructures:

  • InGaAsP/GaAs epilayers grown on GaAs
  • Optimization of photodetector figures of merit

 –       High Electron Mobility Transistors based on AlGaN/GaN:

  • Technological processing of HEMTs
  • Surface passivation
  • Electrical and defect characterization

 

IMR looks forward to expanding this collaboration and talking with OSU faculty who may be interested in participating in collaborations with UPM faculty.  Please contact IMR Director Steve Ringel (ringel.5@osu.edu) with any questions about this partnership.