5/20 Webinar: From Al(Ga)N/GaN to Ga2O3 power switching devices: Status, challenges and perspectives of WBG devices

mhuson Events, General

Title: From Al(Ga)N/GaN to Ga2O3 power switching devices: Status, challenges and perspectives of WBG devices

Speaker: Prof. Joachim Wurfl, Ferdinand-Braun-Institut, Berlin


When: 10 a.m. Thursday May 20, 2021

Where: Zoom Link


Abstract: Wide bandgap devices are very promising for future electronic systems and energy efficient solutions. This presentation provides an overview on different technologies for power switching devices with a special focus on particular issues to be handled for assuring industrial exploitation.  It will mainly relate to work going on at FBH, Berlin, Germany. Technology and performance of lateral and vertical GaN and Ga2O3 power switching devices will be considered and critically commented.

Biography: Dr. Joachim Würfl received his PhD in Electrical Engineering at the Technical University of Darmstadt, Germany in 1989 where he worked on technology and design of high temperature and high power GaAs-based devices. As a post-doctoral he developed micro-mechanical sensors based on III/V compound semiconductors at the same university. Dr. Würfl joined Ferdinand-Braun-Institut (FBH) in 1992 where he has been responsible for clean room technology, process development and processing of III/V optoelectronic and microwave devices. Additionally he has been in charge of design and development of power HBTs and power GaN devices. In 2007 he has been appointed head of the newly implemented research area GaN electronics. In this function he is managing several projects on GaN-based discrete power devices, X- and Ka-band MMICs as well as high voltage power devices including Galliumoxide technology. He is responsible for design, technological implementation, characterization and reliability testing of these devices. Furthermore he is CEO of the FBH spin-off company Berlin Microwave Technologies AG (BeMiTec). In terms of academic education Dr. Würfl delivers lectures at Technical University Berlin (TUB) and National Yang Ming Chiao Tung University (NYCU), Hsinchu, Taiwan.

Hosted by Center of Wide Bandgap Semiconductors