Semiconductor Epitaxy and Analysis Laboratory (SEAL)

Locations:

SEAL Molecular Beam Epitaxy (MBE) Lab (Cleanroom):  095 Dreese Laboratories, 2015 Neil Avenue, Columbus, Ohio

SEAL Analysis Lab:  360 Caldwell Laboratory, 2024 Neil Avenue, Columbus, Ohio

Website: https://seal.osu.edu/ 

Contact: Mark Brenner, Lab Manager, 614-688-4568, brennerm@ece.osu.edu

Description

The Semiconductor Epitaxy and Analysis Laboratory (SEAL) houses world-class facilities for research based on molecular beam epitaxy (MBE) and is Ohio State’s first and primary MBE facility. SEAL researchers are focused on MBE-grown III-V materials and devices, including both III-AsP and III-N compounds, and also III-V/Si integration and a variety of 2-D, 1-D and 0-D nanostructures.  Research spans from basic physics, chemistry and interface science studies of technologically-relevant materials to device-driven epitaxy that supports major initiaatives in advanced photovoltaics, electronics, light emitters and detectors, and sensors. SEAL includes 5 MBE systems, 3 of which (for III-AsP and III-AsP/SiGe) are interlocked with an in-situ XPS analytic chamber, and 2 are dedicated for GaN and related materials.  The Lab also includes a wide range of advanced, state of the art materials characterization tools to support advanced epitaxy and forefront advances in electronic materials.   SEAL is a fully staffed user facility open to university and industry researchers.

Available Instrumentation

  • MBE1: Highly modified 3 inch Varian GENII solid source III-V MBE chamber for GaAlInAsP family of materials
  • MBE2: Solid source MBE chamber for epitaxial metals, spintronic metals, Si and Ge.
  • MBE3: 3 inch Varian GENII based solid source MBE chamber for exploratory materials (currently under renovation)
  • MBE4: Veeco 930 solid source Plasma-assisted MBE chamber for AlGaInN family materials
  • MBE5: NH3-based III-N MBE chamber (under construction)
  • X-ray photoelectron spectroscopy (XPS) analytic chamber, interconnected with MBE1,2,3 systems; includes monochromatized Al Kα  x-ray source and temperature-dependent measurements
  • BEDE D1 High Resolution Triple Axis X-ray Diffraction System with x-ray reflectivity, symmetric and assymetric reciprocal space mapping, environmental stage and x-ray topography
  • Variable field and temperauture Lakeshore Cryotronics Hall Effect system, including  QMSA capability; temperature range is 10k-325K and with fields up to 10T
  • Photoluminescence (PL) Spectroscopy:  Low temperature capability and 488nm Argon laser

 

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