Electronic Materials and Nanostructures Laboratory (EMNLAB)

Locations: Surfaces and Interfaces Laboratory
320 Caldwell Laboratory, 2024 Neil Avenue, Columbus, Ohio

Nanoscale Materials Laboratory and Nano-Characterization Laboratory
020 Dreese Laboratories, 2015 Neil Avenue, Columbus, Ohio

Oxide Molecular Beam Epitaxy and Electronic Characterization Laboratory
2175 Physics Research Building, 191 West Woodruff Ave., Columbus, Ohio

Website: http://emnlab.ece.ohio-state.edu/

Contacts: EMNLAB Director, Professor Leonard Brillson,
(614) 292-8015, brillson.1@osu.edu

Caldwell Lab facility: William Ruane, 440-328-9145, ruane.3@buckeymail.osu.edu

Dreese Labs facility: James Perkins, 817-966-7192, perkins.374@buckeyemail.osu.edu

Physics Research Building facility: Dr. Zhaoquan Zeng, 614-247-2396, Zhaoqzeng@gmail.com


The Electronic Materials and Nanostructures Laboratory (EMNLAB) houses world-class surface and interface analytical facilities, including quantum-scale, ultrahigh vacuum depth-resolved cathodoluminescence, photoluminescence, X-ray photoemission, UV photoemission, Auger electron, and secondary ion mass spectroscopies, electron microscopy, scanned probe microscopies and spectroscopy, and molecular beam epitaxy of advanced oxide crystals. These characterization, growth, and processing techniques are used to design, investigate and control the surface, interface, ultrathin, and nanostructure properties of electronic materials.

The EMNLAB research facilities include a Surfaces and Interfaces Laboratory in Caldwell, the Interdisciplinary Nanoscale Materials and Nano-Characterization Labs in the basement of Dreese, and the Oxide Molecular Beam Epitaxy, Electronic and Chemical Characterization Laboratory in the Physics Research Building. The Dreese facilities are also located near the Microelectronics Laboratory, a class 100/1000 clean room with teaching and research facilities for Si microelectronic and III-V optoelectronic device fabrication.


Surfaces and Interfaces Laboratory (320 Caldwell Lab)

  • Two ultra-high vacuum (UHV) chambers equipped with many types of analysis techniques
  • Electron-beam evaporation and thermal evaporation for evaporation of Ti, Pt, Al, Au, and Ga, as well as a state-of-the-art low-temperature (80K) Depth-Resolved Cathodoluminescence Spectroscopy (DRCLS) system with UHV fiber-optic light collection and Oriel 260i with a high-resolution CCD detection system, Auger electron spectroscopy with Ar+ ion gun for Auger depth profiling, and low energy electron diffraction (LEED) for analyzing surface atomic ordering.  DRCLS can be performed from 180 nm – 1000 nm allowing characterization of important material systems such as AlN, GaN, and SiC.
  • Low-temperature photoluminescence spectroscopy (PL) setup using a 325 nm HeCd laser and 633 nm HeNe laser; capable of  variable temperature photoluminescence from 10 – 300K with 325 nm, 40 mW HeCd laser and 633 nm HeNe laser excitation and high resolution light collection from an Oriel MS257 imaging spectrograph
  • Additional process chamber for remote-plasma surface treatments and thermal processing, including low energy electron nanoscale spectroscoopy (LEEN) with a 0.5 – 5 kV electron gun system, x-ray photoemission spectroscopy (XPS) with Mg/Zr dual anode source, Auger electron spectroscopy (AES) with a double-pass cylindrical mirror analyzer, and low energy electron diffraction (LEED) for the characterization of surface atomic ordering.

Interdisciplinary Nanoscale Materials and Nano-Characterization Labs
(020 Dreese)

  • Normal incidence, 1 – 25 kV JEOL Auger Microprobe/SEM with a 5 nm minimum probe size for high spatial resolution secondary electron imaging and a 25nm minimum probe size for Auger electron imaging with capabilities for spectral data, Depth-Resolved Cathodoluminescence Spectroscopy (DRCLS) depth and line profiles, hyperspectral imaging for rapid, high-resolution 3-dimensional spectral mapping, secondary electron imaging, Auger electron imaging, Auger depth profiling (ADP), and wide area mapping of spectral features and morphology.
  • Electron beam induced current (EBIC) stage for measuring carrier diffusion lengths and in-situ operation of high power electronics.
  • UHV specimen stage has cryogenic capabilities ranging from 10 – 323 K for enhancing band edge features and probing thermal quenching effects.
  • UHV SEM is interlocked to a process chamber for metallization, thermal processing, in situ cleaving, and chemical processing.
  • PHI TRIFT 3 Time of Flight Secondary Ion Mass Spectrometry (TOF-SIMS) facility capable of: imaging SIMS at a 120 nm resolution; SIMS depth profiling at a 3 nm resolution; high mass capabilities for polymer and bio samples; high mass resolution for separation of near identical masses.
  • Park Systems  XE-70 Atomic Force Microscope (AFM) capable of: nm-scale surface morphology, nm-scale work function in Kelvin Force Microscopy (KPFM) mode, nm-scale surface photovoltage spectroscopy (SPS) to measure deep level defect gap state levels and densities over 0.5-5 eV range, 2-dimensional mapping of deep level defects.

Oxide Molecular Beam Epitaxy, Electronic and Chemical Characterization Lab (2175 Physics Research Bldg.)

  • Molecular beam epitaxy (MBE) of complex oxides including SrTiO3, BaSrTiO3, BaTiO3, TiO2, and SrNiWO6 using a Veeco GEN 930 oxide MBE system equipped with nine shuttered effusion cells, a load-locked 3-pocket Thermionics electron beam evaporator, a Unibulb RF plasma source for oxygen, and 1-30 keV reflection high energy electron diffraction (RHEED) optics, a 3” substrate manipulator assembly with continuous azimuthal rotation and dual filament heater for crystal growth up to 1200°C at O2 partial pressue up to 10E-5 Torr, a load-locked entry/exit chamber, a buffer/preparation chamber, an extension chamber transfer tube assembly for UHV transfer between MBE, XPS, CLS, ROP, and metallization chambers.
  • PHI 5000 Versaprobe X-Ray Photoemission Spectroscopy (XPS) facility capable of: monochromatized  Al Ka core level elemental analysis with 0.477 eV energy resolution; imaging XPS at 2-10 um resolution; XPS depth profiling at a 3 nm resolution; chemical shift information; valence band photoemission spectra; Fermi level positions relative to band edges; heterojunction band offset determination.
  • Omicron HIS 13 vacuum UV He lamp (40.8 eV He II) and0.158 eV (He I) energy resolution capable of: angle-dependent UV photoelectron spectroscopy (UPS) valence band spectra, Fermi level positions, work functions, and valence band offsets.
  • Depth-Resolved Cathodoluminescence Spectroscopy (DRCLS) in low temperature (80 K) minichamber with Kimball Physics EGL-2022/EPGS-20133 (50 eV – 5 keV electron gun connected via UHV interlocks with XPS/UPS/MBE chambers.
  • Remote oxygen plasma (ROP) processing of samples using a 13.56 MHz RF source capable of: removing hydrocarbons, sub-surface hydrogen, and sub-surface oxygen vacancies without degrading rms surface roughness.  Nitrogen, oxygen, and hydrogen plasma generation is possible with this system.  Thermal processing using a pyrometer or thermocouple to measure the specimen temperature is also possible.
  • Metal Deposition using filaments and crucibles with deposition masks to form 300-500 μm diameter Schottky diodes connected via  UHV interlocks with XPS/UPS/MBE chambers.

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