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Faculty SpotlightIMR Faculty Spotlight, January 2007
Dr. Johnston-Halperin’s research history covers a broad range of topics in spin-based and nanoscale science and technology, including:
Examples of Recent Research Figure 1 (below) shows how the ability to fabricate extremely dense crossbar arrays coupled with the use of bistable molecular materials with scale-invariant functionality enables the fabrication of electronically addressable memory circuits at densities comparable to or better than the latest magnetic memory technologies. A second example can be found in Figure 2 (below): due to its weak spin orbit coupling, GaN exhibits spin coherence times comparable to the highest quality GaAs epilayers, with significant coherence present even at room temperature. This result has significant implications for the design of functional spintronic circuits as well as in the pursuit of solid-state based quantum computing. Current Research Activities Since arriving at OSU, Prof. Johnston-Halperin has begun an interdisciplinary and collaborative research effort aimed at both the development of functional nanostructured materials as well as exploring ways to integrate spin-based functionality into nanoscale devices. Prof. Johnston-Halperin’s research group currently consists of two graduate student researchers (Sarah Parks and Lei Fang, both from the Department of Physics), and is still in the process of expanding. Current and pending research projects include:
More information and recent results can be found on the Johnston-Halperin group website, http://www.physics.ohio-state.edu/~ejh/.
Fig. 1 (a) Time resolved Faraday rotation signal (TRFR) from a GaN epilayer at various magnetic fields. The oscillating signal tracks the x-component of the optically induced spin polarization; the envelope of this signal indicates the inhomogenous (T2*) spin lifetime. (b) TRFR data showing room-temperature spin coherence [PRB(Rapid Comm.) 63, 121202 (2001)].
Fig. 2 Inset: Large area view of a nanowire-based crossbar circuit including lithographically defined electrical contacts. Main Image: Expanded view of a nanowire crossbar at a bit density of 1011 Bits/cm2. A bistable [2]rotaxane molecular monolayer forms the functional layer of the device [publication pending, Nature]. |